E14600 - SEMI E146 - Test Method for the Determination of Particulate Contamination from Minienvironments used for Storage and Transport of Silicon Wafers Revision:SEMI E146-0306 - Inactive 2 A specification of the

2  A specification of the material quality of SI GaAs substrates includes a number of the parameters described below

Nonuniformity of the surface leads to nonuniform oxide on a wafer and causes degradation of the oxide breakdown voltage

18 — Specification for Sensor/Actuator Specific Device Model for Vacuum Pump Device

The time zero dielectric breakdown (TZDB) method can provide an oxide film failure mode classification

E14600 - SEMI E146 - Test Method for the Determination of Particulate Contamination from Minienvironments used for Storage and Transport of Silicon Wafers Revision:SEMI E146-0306 - Inactive 2 A specification of theNOTICE: This Standard or Safety Guideline has an Inactive Status because the conditions to maintain Current Status have not been met. Inactive Standards or Safety Guidelines are available from SEMI and continue to be valid for use. This Standard defines a test method for the determination of particulate contamination from minienvironments used for storage and transport of silicon wafers in semiconductor manufacturing. The particulate contamination