MF008400 - SEMI MF84 - Test Method for Measuring Resistivity of Silicon Wafers With an In-Line Four-Point Probe Revision:SEMI MF84-1105 - Superseded The first stack (refer to

The first stack (refer to Figure 1) is a BWS pair of 775 µm thick wafers following TSV formation and the bonding operation

its internal buffer space

3  This Test Method can be used for process control

This guide was technically approved by the global Flat Panel Display Committee and is the direct responsibility of the North American Flat Panel Display Committee

MF008400 - SEMI MF84 - Test Method for Measuring Resistivity of Silicon Wafers With an In-Line Four-Point Probe Revision:SEMI MF84-1105 - Superseded The first stack (refer toThis Test Method covers the measurement of the resistivity of silicon wafers with an in line four point probe. This Test Method describes a procedure that enables inter laboratory comparisons of the room temperature resistivity of silicon wafers. The precision that can be expected depends on both the resistivity of the wafer and on the homogeneity of the wafer. Round robin tests have been conducted to establish the expected precision for measurements