E03700 - SEMI E37 - Specification for High-Speed SECS Message Services (HSMS) Generic Services StdVol-Gases As gate dielectric thickness approaches

As gate dielectric thickness approaches 1 nm

it is necessary to assign multiple substrate IDs for efficient operation as the sizes become larger

SEMI E109-1104 (technical revision)

Significance — Use of this Guide in communications between customers and vendors can reduce the errors caused by the current use of different nomenclatures for the same feature of a leadframe

E03700 - SEMI E37 - Specification for High-Speed SECS Message Services (HSMS) Generic Services StdVol-Gases As gate dielectric thickness approachesHigh Speed SECS Message Services (HSMS) provides a means for independent manufacturers to produce implementations which can be connected and interoperate without requiring specific knowledge of one another. HSMS is intended as an alternative to SEMI E4 (SECS I) for applications where higher speed communication is needed or when a simple point to point topology is insufficient. SEMI E4 (SECS I) can still be used in applications where these and other