50 ohm.cm Al2O3 Sample Plate Aluminum Oxide Substrates Al2O3Ge Wafer Specification Growing Method: CZ Orientation: (111) + 0. 5 Deg. Wafer Size: 1" dia x 0. 5 mm Surface Polishing: one side polished Surface roughness: Ra < 10 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5. 6754 A"> 50 ohm.cm Al2O3 Sample Plate Aluminum Oxide Substrates Al2O3"> 50 ohm.cm Al2O3 Sample Plate Aluminum Oxide Substrates Al2O3Ge Wafer Specification Growing Method: CZ Orientation: (111) + 0. 5 Deg. Wafer Size: 1" dia x 0. 5 mm Surface Polishing: one side polished Surface roughness: Ra < 10 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5. 6754 A"> 50 ohm.cm Al2O3 Sample Plate Aluminum Oxide Substrates Al2O3"> 50 ohm.cm Al2O3 Sample Plate Aluminum Oxide Substrates Al2O3Ge Wafer Specification Growing Method: CZ Orientation: (111) + 0. 5 Deg. Wafer Size: 1" dia x 0. 5 mm Surface Polishing: one side polished Surface roughness: Ra < 10 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5. 6754 A"> Ge Wafer (111) N-type Undoped, 1" dia x 0.5 mm ,1SP, R:>50 ohm.cm Al2O3 Sample Plate Aluminum Oxide Substrates Al2O3 – avenirya.com

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Ge Wafer (111) N-type Undoped, 1" dia x 0.5 mm ,1SP, R:>50 ohm.cm Al2O3 Sample Plate Aluminum Oxide Substrates Al2O3

$125.35

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50 ohm.cm Al2O3 Sample Plate Aluminum Oxide Substrates Al2O3">
Description

Aluminum Oxide Substrates Al2O3

Note:  EPI ready wafers

Option 2PCS 50mm sealing gasket for Stainless Steel Jar of milling machine (80ml) - MTI-PJ-ACC#03

Polished surface: two sides epi polished by special CMP technology

Ge Wafer (111) N-type Undoped, 1" dia x 0.5 mm ,1SP, R:>50 ohm.cm Al2O3 Sample Plate Aluminum Oxide Substrates Al2O3Ge Wafer Specification Growing Method: CZ Orientation: (111) + 0. 5 Deg. Wafer Size: 1" dia x 0. 5 mm Surface Polishing: one side polished Surface roughness: Ra < 10 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5. 6754 A

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