P01400 - SEMI P14 - 黒鉛炉原子吸光分光法によるポジティブフォトレジスト中の錫の測定 StdPbc-0421 SEMI M66-0706 (first published)

SEMI M66-0706 (first published)

本スタンダードは，global Silicon Wafer Committeeで技術的に承認されている。現版は2005年11月29日，global Audits and Reviews Subcommitteeにて発行が承認された。2006年2月にwww

Nn grown on monocrystalline wafers of GaAs or InP (other substrates may be considered where appropriate documents exist to describe the specification of the substrate)

The specification described here covers physical

P01400 - SEMI P14 - 黒鉛炉原子吸光分光法によるポジティブフォトレジスト中の錫の測定 StdPbc-0421 SEMI M66-0706 (first published)NOTICE: This translation is a REFERENCE COPY ONLY. If differences should exist between the English version and a translation in any other language, the English version is the official and authoritative version. SEMI SEMI NOTICE: This Standard or Safety Guideline has an Inactive Status because the conditions to maintain Current Status have not been met. Inactive Standards or Safety Guidelines are available from SEMI and continue to be valid for use. 1: