M05400 - SEMI M54 - Guide for Semi-Insulating (SI) GaAs Material Parameters StdPbc-1218 The purpose of this Document

The purpose of this Document is to provide guidelines for organosilicate precursors used in Low K CVD processes and to standardize testing procedures to support those requirements

Determining the root cause of TDDB results is beyond the scope of this Test Method

There is close alignment between this Guide and common specifications used for the purchase of silicon wafers

It should be noted that the following list of criteria was considered when determining the specified analytical method: Reliability

M05400 - SEMI M54 - Guide for Semi-Insulating (SI) GaAs Material Parameters StdPbc-1218 The purpose of this Document1 Purpose 1. 1 Substrates with high electrical resistivity and electron drift mobility are needed to fabricate high performance digital and analog microelectronic devices and circuits. Semi insulating n type gallium arsenide, henceforth termed SI GaAs, has been established worldwide as a preferred substrate material for such applications. 1. 2 The active layers needed for devices are generated either by epitaxy or by ion implantation. The quality of