LaAlO3, (100) orn. EPI polishing 3" x 0.5mm wafer 1 SP - LAOa76D05C1US Orientation 111A First Columbic Efficiency: 94

First Columbic Efficiency: 94

Pressure Calibration Kit (Optional)

12 eV (Kelvin probe)

5 Capacity versus Cycle Number 10 Ah Pouch Cell (High Discharge Rate) with LFPO-S21 Cathode Capacity versus Discharge Rate

LaAlO3, (100) orn. EPI polishing 3" x 0.5mm wafer 1 SP - LAOa76D05C1US Orientation 111A First Columbic Efficiency: 94LaAlO3 single crystal provides a good lattice match to many materials with perovskite structure. It is an excellent substrate for the epitaxial growth of high Tc superconductors and magnetic and ferroelectric thin films. The dielectric properties of LaAlO3 crystal are well suitable for low loss microwave and dielectric resonance applications. Substrate Specifications: Wafer Size: 3" dia + 0. 5 mm x 0. 5 thickness + 0. 05 mm Wafer Orientation: (100) +