Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 100mm dia x 0.5 mm t, P type, 1SP R:0.01-0.05 ohm.cm Boron-Nitride on Silicon Characterizations: Raman

Characterizations: Raman

tip length: 43mm

Standard materials include 316 stainless steel bodies and glands

Plastic Foam Module Wafer Carrier is a solution for valued and fragile devices

Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 100mm dia x 0.5 mm t, P type, 1SP R:0.01-0.05 ohm.cm Boron-Nitride on Silicon Characterizations: RamanThermal oxide Research Grade , about 80 % useful area SiO2 layer on 100mm Silicon wafer Oxide layer thickness: 300 nm ( 3000A) + 10% Refractive index 1. 455 Silicon Wafer Specifications: Conductive type: P type B doped Resistivity: 0. 01 0. 05 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 100mm dia + 0. 5 mm x 0. 5 mm th Orientation: (100) + 0. 5o Polish: one