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Ge Substrate (110) 10x10x 0.4-0.5 mm, 2 SP, N-type Undoped, R>50 ohm.cm - GEUe101005S2R50 GaAs 71 Array (Capacity): 13*20=250
Ge Substrate (110) 10x10x 0.4-0.5 mm, 2 SP, N-type Undoped, R>50 ohm.cm - GEUe101005S2R50 GaAs 71 Array (Capacity): 13*20=250
$57.44
Description
71 Array (Capacity): 13*20=250
The coater has Max
005 Ohms/cm (If you would like to measure the resistivity accurately
02mm) thick
Ge Substrate (110) 10x10x 0.4-0.5 mm, 2 SP, N-type Undoped, R>50 ohm.cm - GEUe101005S2R50 GaAs 71 Array (Capacity): 13*20=250Specifications Growing Method: CZ Wafer Size: 10x10x0. 4 0. 5 mm Surface Polishing: two sides optical polished Orientation: (110) Surface finish (RMS or Ra) : < 30A Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm EPD: N A Package: under 1000 class clean room in wafer container Related Product Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater
Shipping Notes
- Free Standard Shipping on $100+ Orders to the USA.
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- Delivery to the USA:
- Standard Shipping : 3-10 business days
- If time is of the essence, please consider selecting expedited delivery for faster service.
 10x10x 0.4-0.5 mm, 2 SP, N-type Undoped, R>50 ohm.cm - GEUe101005S2R50 GaAs 71 Array (Capacity): 13*20=250){kind=link}
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