GaN Template on Sapphire (0001), N type undoped, 2" Dia. x 0.43 - 0.5mm, 1sp, GaN Film:4 - 5 micron Coaters 4 @ 300K at A

4 @ 300K  at A axis

Co-axis Nozzle

Dislocation Density           <5x106cm-2

(Note: MTI does not carry a warranty for the Laptops

GaN Template on Sapphire (0001), N type undoped, 2" Dia. x 0.43 - 0.5mm, 1sp, GaN Film:4 - 5 micron Coaters 4 @ 300K at AGaN Template on saphhire is made by a hydride vapor phase epitaxy (HVPE) based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. GaN template is a cost effective way to replace GaN single crystal substrate. Specifications Sizes 2 Round Dimensions 50. 8mm + 0. 25mm Substrate Sapphire, Orientation c axis (0001) + 1. 0 o Substrate Sapphirethickness: 0. 43mm+ 0. 025mm Conduction Type: N