50 ohm-cm Processing Tubes Such an alumina tube canGe Wafer Specification Growing Method: CZ Orientation: (100) + 2. 5 Deg. Wafer Size: 2" dia x 500 microns Surface Polishing: one side epi polished Surface roughness: RMS or Ra: ~ 10 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure:"> 50 ohm-cm Processing Tubes Such an alumina tube can"> 50 ohm-cm Processing Tubes Such an alumina tube canGe Wafer Specification Growing Method: CZ Orientation: (100) + 2. 5 Deg. Wafer Size: 2" dia x 500 microns Surface Polishing: one side epi polished Surface roughness: RMS or Ra: ~ 10 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure:"> 50 ohm-cm Processing Tubes Such an alumina tube can"> 50 ohm-cm Processing Tubes Such an alumina tube canGe Wafer Specification Growing Method: CZ Orientation: (100) + 2. 5 Deg. Wafer Size: 2" dia x 500 microns Surface Polishing: one side epi polished Surface roughness: RMS or Ra: ~ 10 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure:"> Ge Wafer (100) +/- 2.5 Degree Undoped, 2" dia x 0.5 mm, 1SP, Resistivities: >50 ohm-cm Processing Tubes Such an alumina tube can – avenirya.com

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Ge Wafer (100) +/- 2.5 Degree Undoped, 2" dia x 0.5 mm, 1SP, Resistivities: >50 ohm-cm Processing Tubes Such an alumina tube can

$120.17

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50 ohm-cm Processing Tubes Such an alumina tube can">
Description

Such an alumina tube can be used at operating temperatures to 1700 oC in both oxidizing and reducing atmospheres

Please consult professional technicals before installation

Xinbing Zhao from Zhejiang University

Overall: 200 L x 330 W x 550 H mm

Ge Wafer (100) +/- 2.5 Degree Undoped, 2" dia x 0.5 mm, 1SP, Resistivities: >50 ohm-cm Processing Tubes Such an alumina tube canGe Wafer Specification Growing Method: CZ Orientation: (100) + 2. 5 Deg. Wafer Size: 2" dia x 500 microns Surface Polishing: one side epi polished Surface roughness: RMS or Ra: ~ 10 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure:

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