GaAs VGF Grown(110) orientation, un-doped, Semi-Insulating, 3" dia x 0.5mm, 1sp Aluminum Film Polished surface: One side EPI

Polished surface: One side EPI polished via a special CMP procedure with Ra < 5 A

The bottom cylinder (piston) is shown in the illustration in the dimension section

Sample Holder & Mini-vise

Size:                          5x5 x 0

GaAs VGF Grown(110) orientation, un-doped, Semi-Insulating, 3" dia x 0.5mm, 1sp Aluminum Film Polished surface: One side EPIGaAs single crystal wafer Growing Method: VGF Orientation: (110) Primary Flat: EJ(1 10) + 0. 5 degree Secondary Flat: EJ (001) + 0. 5 degree Size: 3" dia x 0. 5mm Polishing: One side polished Doping: Un doped, Semi Insulating Conductor type: S I Carrier Concentration: N A Mobility: 4570 6190cm^2 V. S Resistivity : (0. 89 3. 8)x10^8ohm. cm EPI ready surface and packing Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP