Ga2O3-Beta Single Crystal Substrate, <100>+/-1 degree N-type ,Fe-doped 10x10x0.5mm, 1SP Max. current +6 A Dislocation Density < 5x10^5 cm^-2

Dislocation Density            < 5x10^5 cm^-2

Material:                              Fiberous Alumina chamber with heating coils embedded

Wafer base:                             Silicon [111]

0mm            XRD Plate package

Ga2O3-Beta Single Crystal Substrate, <100>+/-1 degree N-type ,Fe-doped 10x10x0.5mm, 1SP Max. current +6 A Dislocation Density < 5x10^5 cm^-2Substrate Specifications: Chmistry: Ga2O3 Structure: Monoclinic Lattice Constant: a=12. 23A, b=3. 04A, c=5. 80A, =103. 7 Orientation: <100> + 1 ( Please pay attention a, b, c axis defination above ) Type Dopant: N type ,Fe doped Size: 10x10 x 0. 5 mm Polish: one side polished Resistivity: <0. 01 ohm. cm Surface roughness: < 15A Useful Area: >80%