50 ohm-cm Al2O3 Water Cooling Pump is requiredGe Wafer Specification Growing Method: CZ Orientation: (100) + 1. 0 Deg. Wafer Size: 4" dia x 500 microns Surface Polishing: Two sides epi polished Surface roughness : RMS or Ra:~ 10 A(By AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties of Ge Crystal"> 50 ohm-cm Al2O3 Water Cooling Pump is required"> 50 ohm-cm Al2O3 Water Cooling Pump is requiredGe Wafer Specification Growing Method: CZ Orientation: (100) + 1. 0 Deg. Wafer Size: 4" dia x 500 microns Surface Polishing: Two sides epi polished Surface roughness : RMS or Ra:~ 10 A(By AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties of Ge Crystal"> 50 ohm-cm Al2O3 Water Cooling Pump is required"> 50 ohm-cm Al2O3 Water Cooling Pump is requiredGe Wafer Specification Growing Method: CZ Orientation: (100) + 1. 0 Deg. Wafer Size: 4" dia x 500 microns Surface Polishing: Two sides epi polished Surface roughness : RMS or Ra:~ 10 A(By AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties of Ge Crystal"> Ge Wafer (100) Undoped, 4" dia x 0.5 mm, 2SP, R:>50 ohm-cm Al2O3 Water Cooling Pump is required – avenirya.com

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Ge Wafer (100) Undoped, 4" dia x 0.5 mm, 2SP, R:>50 ohm-cm Al2O3 Water Cooling Pump is required

$401.93

Quantity
50 ohm-cm Al2O3 Water Cooling Pump is required">
Description

Water Cooling Pump is required (May order at the related product below)

18650 case's grooving  and sealing machine is available upon request

small-scale battery formation

the PTFE flange may melt off if the furnace temperature is higher than 500ºC

Ge Wafer (100) Undoped, 4" dia x 0.5 mm, 2SP, R:>50 ohm-cm Al2O3 Water Cooling Pump is requiredGe Wafer Specification Growing Method: CZ Orientation: (100) + 1. 0 Deg. Wafer Size: 4" dia x 500 microns Surface Polishing: Two sides epi polished Surface roughness : RMS or Ra:~ 10 A(By AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties of Ge Crystal

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