GaN Template on Sapphire (0001), N type, undoped, 2"x 0.5mm,1sp GaN Film:30um, (Production Grade) - FmGaNonALC50D05C1FT30um Target A-Z Thickness of polycrystalline Cu <111>

Thickness of   polycrystalline Cu <111> film: 100 nm

High-throughput milling jar is available for milling 32 types of sample ( 25 ml max) per batch

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Two types of battery holders are included in the BST8-A6V0 Standard package:

GaN Template on Sapphire (0001), N type, undoped, 2"x 0.5mm,1sp GaN Film:30um, (Production Grade) - FmGaNonALC50D05C1FT30um Target A-Z Thickness of polycrystalline Cu <111>GaN Template on saphhire is made by a hydride vapor phase epitaxy (HVPE) based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. GaN template is a cost effective way to replace GaN single crystal substrate. Specifications: Production grade Sizes 2 Round Dimensions 50. 8mm + 0. 25mm Substrate Sapphire, C plane (0001) with 0. 2 degree miscut toward M plane Conduction Type: N type,