Ge Substrate: (100) 5x5 x 0.5 mm , 1SP, N type Sb doped,R:10-15 Ohm.cm Glass Substrates Name Qty 1 Main machine

Name Qty 1 Main machine (24T hydraulic pressing machine) 1 unit 2 Allen Hex Wrench 1 set 3 Crimping Die Padding Block 1 pc 4 Manual CD 1 pc

Optional:    Rotating heater with speed (0 - 5 RPM) is available upon request at extra cost

Temper:                                     H19

Chemical Composition Indium (III) Chloride (InCl3) Purity Material Basis 99

Ge Substrate: (100) 5x5 x 0.5 mm , 1SP, N type Sb doped,R:10-15 Ohm.cm Glass Substrates Name Qty 1 Main machineGe Wafer Specification Growing Method: CZ Wafer Size: 5x5 x0. 5 mm Surface Polishing: one side epi polished Orientation: (100) Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Sb doped Conductor type: N type Resistivity: 10 15 Ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other Crystal wafer