+ 0. 5 Dimension: 1" x 0. 26 + 0. 03 mm Polished: One side epi polished Surface Roughness: < 5 A by AFM Typical Properties of Single Crystal SiC Formula weight: 40. 10 Unit Cell: Hexagonal Lattice constant: a =3. 07 A c = 10. 53 A Stacking sequence: ABCB (4H) Growth Technique: MOCVD Polishing : Silicon face polished Band Gap: 3. 26eV ( Indirect) Conductivity type: N TTV Bow Warp: <=35 um Micropipe"> + 0. 5 Dimension: 1" x 0. 26 + 0. 03 mm Polished: One side epi polished Surface Roughness: < 5 A by AFM Typical Properties of Single Crystal SiC Formula weight: 40. 10 Unit Cell: Hexagonal Lattice constant: a =3. 07 A c = 10. 53 A Stacking sequence: ABCB (4H) Growth Technique: MOCVD Polishing : Silicon face polished Band Gap: 3. 26eV ( Indirect) Conductivity type: N TTV Bow Warp: <=35 um Micropipe"> + 0. 5 Dimension: 1" x 0. 26 + 0. 03 mm Polished: One side epi polished Surface Roughness: < 5 A by AFM Typical Properties of Single Crystal SiC Formula weight: 40. 10 Unit Cell: Hexagonal Lattice constant: a =3. 07 A c = 10. 53 A Stacking sequence: ABCB (4H) Growth Technique: MOCVD Polishing : Silicon face polished Band Gap: 3. 26eV ( Indirect) Conductivity type: N TTV Bow Warp: <=35 um Micropipe"> SiC - 4H (0001), 1" dia. x0.26 mm th., one side polished - SC4Hz25D026C1US ITO Coated Plastic Film Total Thickness: ~83 um – avenirya.com

New Arrivals are Here-Fast Shipping from Our USA Warehouse

SiC - 4H (0001), 1" dia. x0.26 mm th., one side polished - SC4Hz25D026C1US ITO Coated Plastic Film Total Thickness: ~83 um

$321.32

Quantity
Description

Total Thickness: ~83 um

ID:      230 mm

Two needle valves allow you control air flow pressure and its splittable design provides you the most convenient way to test various anode and cathode materials

Please contact MTI for mullite

SiC - 4H (0001), 1" dia. x0.26 mm th., one side polished - SC4Hz25D026C1US ITO Coated Plastic Film Total Thickness: ~83 umSpecifications of Substrate Orientation: <0001> + 0. 5 Dimension: 1" x 0. 26 + 0. 03 mm Polished: One side epi polished Surface Roughness: < 5 A by AFM Typical Properties of Single Crystal SiC Formula weight: 40. 10 Unit Cell: Hexagonal Lattice constant: a =3. 07 A c = 10. 53 A Stacking sequence: ABCB (4H) Growth Technique: MOCVD Polishing : Silicon face polished Band Gap: 3. 26eV ( Indirect) Conductivity type: N TTV Bow Warp: <=35 um Micropipe

Shipping Notes
  • Free Standard Shipping on $100+ Orders to the USA.
  • Except Preorder products are shipped in 48 hours.
  • Delivery to the USA:
  1. Standard Shipping : 3-10 business days
  • If time is of the essence, please consider selecting expedited delivery for faster service.

View More

  • Product more
  • Collection:

You may also like

recommand products

50$ Store Credit
Your message