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Ge Wafer (110)N type, Sb doped, 2" dia x 0.5 mm, 1SP Resistivity: 1-5 ohm.cm Sc Application Notes The pressing die
Ge Wafer (110)N type, Sb doped, 2" dia x 0.5 mm, 1SP Resistivity: 1-5 ohm.cm Sc Application Notes The pressing die
$158.12
Description
Application Notes The pressing die cannot be used for pressing powder with particle size < 30 microns
The Banana Plug of the cable are 4mm banana plug
Conductor type: P-type
NCM622 electrode sheet
Ge Wafer (110)N type, Sb doped, 2" dia x 0.5 mm, 1SP Resistivity: 1-5 ohm.cm Sc Application Notes The pressing dieGe Wafer Specification Growing Method: CZ Orientation: (110) + _0. 5 Deg Wafer Size: 2" dia x 500 microns Surface finish (RMS or Ra) : One side optical polished < 30A Doping: Sb doped Conductor type: N type Resistivity: 1 5 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) EPD: Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5. 6754 A
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