+ 0. 5 o Polishing: one side polishd Packing: Sealed in nitrogen in single wafer container at 100 class clean room Properties Growth method LEC Orientation (100) + 0. 5 o Orientation Flat Two reference flates at <100> Doping Te Conductivity type N type Carrier Concentration (@77 K) (0. 19 0. 50)E18 cc @77K Resistivities (ohm cm): 0. 0005 0. 001 Mobility"> + 0. 5 o Polishing: one side polishd Packing: Sealed in nitrogen in single wafer container at 100 class clean room Properties Growth method LEC Orientation (100) + 0. 5 o Orientation Flat Two reference flates at <100> Doping Te Conductivity type N type Carrier Concentration (@77 K) (0. 19 0. 50)E18 cc @77K Resistivities (ohm cm): 0. 0005 0. 001 Mobility"> + 0. 5 o Polishing: one side polishd Packing: Sealed in nitrogen in single wafer container at 100 class clean room Properties Growth method LEC Orientation (100) + 0. 5 o Orientation Flat Two reference flates at <100> Doping Te Conductivity type N type Carrier Concentration (@77 K) (0. 19 0. 50)E18 cc @77K Resistivities (ohm cm): 0. 0005 0. 001 Mobility"> InSb (100) 2" dia x 0.45 mm, Te doped, N type, 1 side polished - ISTea50D045C1US Sc 99% (horizontal polymer strip is – avenirya.com

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InSb (100) 2" dia x 0.45 mm, Te doped, N type, 1 side polished - ISTea50D045C1US Sc 99% (horizontal polymer strip is

$931.50

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Description

99% (horizontal polymer strip is made of modified polypropylene (PP) and  polyethylene naphthalate (PEN)) Length 61mm Width 4mm Thickness 0

D conflated flange with a universal type high vacuum feedthrough (0

Specifications Dimensions (Dia x Height) Case: 16

Such syringe pump can precisely control the volume of the solution per unit coating area been fed into the gap between the cylindrical barrier and the glass substrate

InSb (100) 2" dia x 0.45 mm, Te doped, N type, 1 side polished - ISTea50D045C1US Sc 99% (horizontal polymer strip is2" InSb wafer (N type, Te Doped ) Size: 2" dia x 0. 45 (+ 0. 025 ) mm thick Orientation: <100> + 0. 5 o Polishing: one side polishd Packing: Sealed in nitrogen in single wafer container at 100 class clean room Properties Growth method LEC Orientation (100) + 0. 5 o Orientation Flat Two reference flates at <100> Doping Te Conductivity type N type Carrier Concentration (@77 K) (0. 19 0. 50)E18 cc @77K Resistivities (ohm cm): 0. 0005 0. 001 Mobility

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