4H-SiC Epitaxial Film on 4H-SiC (0001) w/ 8 degree off, P type,2"dia.x0.33mm, carrier conc. 1.4 E17/cc, 2sp, thickness 4.3um-Fm4HSCon4HSC50d03C2deg8US Accessories Small particles may slip into

Small particles may slip into the gap of the die parts and damage the sleeve during the compression

Replacement fitting for M6 Screws

The testing software (TC5

Fit EQ-OTF-1200X-80

4H-SiC Epitaxial Film on 4H-SiC (0001) w/ 8 degree off, P type,2"dia.x0.33mm, carrier conc. 1.4 E17/cc, 2sp, thickness 4.3um-Fm4HSCon4HSC50d03C2deg8US Accessories Small particles may slip intoSpecifications Film: 4H SiC (0001) Film target thickness: 4. 3 microns with (thickness acceptation range) + 10% Film target doping layer: 1. 4E17 cc with (doping acceptation range) +0% 30% Conductive Type P type with Surface finish Both sides will be polished after deposition, Both Front and Backside Epiwafer polishing with Ra or RMS < 5 Angstrom Substrate: 4H SiC (0001) Prime grade Off axis: miscut 8. 0 + 0. 5 degree Prime Grade: with FWHM 20 arc