Aluminum Film on Silicon Wafer , 3 microns / 4" -- Al-Si-100-3um ,Si(100) P-type B-doped R:1-20 ohm.cm Anode item is sold in quantities

item is sold in quantities of 1 pc for the unit price shown

0) is included to set various working modes for measuring capacity and lifecycle for all types of rechargeable batteries

Surface finish:  One side optical polished < 100A

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Aluminum Film on Silicon Wafer , 3 microns / 4" -- Al-Si-100-3um ,Si(100) P-type B-doped R:1-20 ohm.cm Anode item is sold in quantitiesAluminum Metallic Film Film coated by E beam evaporation under vacuum below 10 6 torr evaporation rate: 0. 2 nanometer per second Aluminum Thickness: 3 microns Film Resistivity: 2. 65 micro ohm cm Film Crystallinity: Weak (111) oriented polycrystals Roughness, RMS: 4. 87 nm and < 10 nm Silicon Wafer Specifications: Conductive type: Si P type, B doped Resistivity: 1 20 ohm cm Size: 4" diameter + 0. 5 mm x 0. 525 + 0. 025 mm th Orientation: (100) + 0.