GaAs, VGF Grown (110) ori. N type, Si-doped, 5 x 5 x 0.3 mm, 2sp Milling Jars Dislocation Density: 5x10^9/ cm^2

Dislocation Density:              5x10^9/ cm^2

which is depended on the material to be mixed

Do not clean the Al clad case with ultrasonic cleaners

Resistivity:               N/A

GaAs, VGF Grown (110) ori. N type, Si-doped, 5 x 5 x 0.3 mm, 2sp Milling Jars Dislocation Density: 5x10^9/ cm^2GaAs single crystal wafer Growing Method: VGF Orientation: (110) Size: 5 x 5 x 0. 35 mm Polishing: Two sides polished Doping: Si doped Conductor type: S C N Carrier Concentration: (2. 4 3. 27)x10E18 cm^3 Mobility: 1630 1870 cm^2 V. S Resistivity :( 1. 17 1. 4)x10^ 3 ohm. cm Ra(Average Roughness) : < 0. 4 nm Note: EPI ready wafers Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces