Nickel<111> Film (100nm) Coated SiO2/Si Wafer -(100) P/Boron ,10x10x0.5mmSSP, R:1-20 ohm.cm - Ni-SO/Si-101005S1 CaF2 Orientation: (001) + / -
$54.05
Description
Orientation: (001) + / - 0
MTI diamond blade is hot pressed and sintered by full diamond powder which has a five times longer service life than that of ordinary edge sintered diamond blades
It can prevent wafers from damage and contamination during shipping and storage
turn the hydraulic valve to Lock position when not in use
Nickel<111> Film (100nm) Coated SiO2/Si Wafer -(100) P/Boron ,10x10x0.5mmSSP, R:1-20 ohm.cm - Ni-SO/Si-101005S1 CaF2 Orientation: (001) + / -Nickel Film Nickel Film Thickness: 100nm Film Crystallinity: (111) oriented polycrystals Silicon Wafer Specifications: Conductive type: Si P type, B doped Resistivity: 1 20 ohm cm Size: 10x10x0. 5mm SiO2 Thichness: 300 nm Orientation: (100) + 0. 5o Polish: One sides polished Surface roughness: Prime Packing: Vacuum packed on a 4" single wafer carrier Optional: you may need tool below to handle the wafer ( click picture to order ) Related Products Thin
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