VGF InP (100) undoped, 2" x 0.35 mm wafer, 2sp - IPUa50D035C2US Boron-Nitride on Silicon The maximum temperature is 100ºC

The maximum temperature is 100ºC

998 alumina tube can be used at operating temperatures to 1800 oC in both oxidizing and reducing atmospheres

Size for one piece

you may section multi-sample  in one time (click pic left to learn how)

VGF InP (100) undoped, 2" x 0.35 mm wafer, 2sp - IPUa50D035C2US Boron-Nitride on Silicon The maximum temperature is 100ºCInP single crystal wafer Orientation: (100) Size: 2" diameter x 0. 35 mm Doping: Un doped Conducting type: S C Polish: Two sides polished Resistivity: (2. 48 3. 34)10^ 1 ohm. cm Mobility: 4250 4340cm^2 V. S EPD: <5000 cm^2 Carrier Concerntration: (4. 34 5. 91) ^15 cmE 3