Thermal Oxide Wafer: One side 300 nm SiO2 Layer on Si (100), 4"dia x 0.50 mm t,undoped N type, 1SP R:>5000 ohm.cm Bi4Ge3O12(BGO12) dimensionally and chemically stable and

dimensionally and chemically stable and offers excellent electrical resistance

Dimensions 2" width x1/16" thickness x 100ft

Resistivity:                         (0

MTI reserves the right to charge an additional handling fee due to special shipping/handling requirements

Thermal Oxide Wafer: One side 300 nm SiO2 Layer on Si (100), 4"dia x 0.50 mm t,undoped N type, 1SP R:>5000 ohm.cm Bi4Ge3O12(BGO12) dimensionally and chemically stable andThermal oxide Layer Research Grade , about 80 % useful area One side SiO2 layer on 4'' Silicon wafer Oxide layer thickness: 300 nm ( 3000A) + 10% Refractive index 1. 455 Silicon Wafer Specifications: Conductive type: N type un dped Resistivity: >5000 ohm. cm Size: 4"dia + 0. 5 mm x 0. 5 mm Orientation: (100) + 1o Polish: one side polished Surface roughness, Ra: < 5A (RMS) Related Products Thin Films A Z Crystal wafer A Z Plasma Cleaner Wafer