Ge Wafer (110) Ga-doped, 2" dia x 0.5 mm, 1SP Resistivity : 1-10 ohm-cm Orientation 100 and faster speed

and faster speed

AC 110V Single Phase or AC 220V Single Phase can be selected in the option bar

This unique product was suggested by Prof

CE certificated only

Ge Wafer (110) Ga-doped, 2" dia x 0.5 mm, 1SP Resistivity : 1-10 ohm-cm Orientation 100 and faster speedGe Wafer Specification Growing Method: CZ Orientation: (110) + _0. 5 Deg. Wafer Size: 2" dia x 500 microns Surface Polishing: one side optical polished Surface finish (RMS or Ra) : < 30A Doping: Ga doped Conductor type: P type Resistivity: 1 10 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a