+ 0. 50 Polishing: One side polishd Packing: in 1000 class clean room with wafer container Properties Growth method LEC Orientation (100) + 0. 5 o Orientation Flat SEMI Doping S doped Conductivity type N type Carrier Concentration (1 30)x10^17 cm3 EPD <50000 cm^ 2 Resistivity: Mobility: <10000 cm^2 vs"> + 0. 50 Polishing: One side polishd Packing: in 1000 class clean room with wafer container Properties Growth method LEC Orientation (100) + 0. 5 o Orientation Flat SEMI Doping S doped Conductivity type N type Carrier Concentration (1 30)x10^17 cm3 EPD <50000 cm^ 2 Resistivity: Mobility: <10000 cm^2 vs"> + 0. 50 Polishing: One side polishd Packing: in 1000 class clean room with wafer container Properties Growth method LEC Orientation (100) + 0. 5 o Orientation Flat SEMI Doping S doped Conductivity type N type Carrier Concentration (1 30)x10^17 cm3 EPD <50000 cm^ 2 Resistivity: Mobility: <10000 cm^2 vs"> InAs (100), S-doped 2" dia x 0.5 mm, one side polished,cc:(1-30)E17/ cm^3 - IASa50D05C1US Oven Optical grade Fused Silica (JGS1) – avenirya.com

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InAs (100), S-doped 2" dia x 0.5 mm, one side polished,cc:(1-30)E17/ cm^3 - IASa50D05C1US Oven Optical grade Fused Silica (JGS1)

$313.38

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Description

Optical grade Fused Silica (JGS1)

which includes (see picture left column) 2 pcs of 0

Excellent for any type of tubing: ceramic

Melting point:                                        710 oC

InAs (100), S-doped 2" dia x 0.5 mm, one side polished,cc:(1-30)E17/ cm^3 - IASa50D05C1US Oven Optical grade Fused Silica (JGS1)2" InAs wafer (Ntype) 2" InAs wafer (S doped, Ntype) Size: 2" dia x 500 micron + 25 microns Orientation: <100> + 0. 50 Polishing: One side polishd Packing: in 1000 class clean room with wafer container Properties Growth method LEC Orientation (100) + 0. 5 o Orientation Flat SEMI Doping S doped Conductivity type N type Carrier Concentration (1 30)x10^17 cm3 EPD <50000 cm^ 2 Resistivity: Mobility: <10000 cm^2 vs

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