Thermal Oxide Wafer: 100 nm SiO2 on Si (100), 5x5 x 0.5 mm, N type, As-doped, 1SP, R: 0.001-0.005 ohm.cm Target A-Z KF25 ports

KF25 ports

Fully eliminates the phenomenon of low voltage or condensation occurred to lithium batteries after welding

Two fibrous ceramic tube blocks are included

Theoretical density: 1

Thermal Oxide Wafer: 100 nm SiO2 on Si (100), 5x5 x 0.5 mm, N type, As-doped, 1SP, R: 0.001-0.005 ohm.cm Target A-Z KF25 portsThermal oxide Layer SiO2 layer on Silicon wafer Oxide layer thickness: 100 nm ( 1000A) + 10% Refractive index 1. 455 Silicon Wafer Specifications: Conductive type: N type As dped Resistivity: 0. 001 0. 005 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 5x5 x 0. 5 mm Orientation: (100) + 1o Polish: one side polished Surface roughness, Ra: < 5A (RMS) Related