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GaN -Single Crystal Substrate,N-type, (0001), 10x10.5x0.35 mm , 1SP Al2O3 Edge: Hand Seam (< 0
GaN -Single Crystal Substrate,N-type, (0001), 10x10.5x0.35 mm , 1SP Al2O3 Edge: Hand Seam (< 0
$200.68
Description
Edge: Hand Seam (< 0
heating rate upto 8 oC/second
It can adapt various grinding jars from 1
8V @150Ah for single-cell or 570Wh for battery pack without protection circus
GaN -Single Crystal Substrate,N-type, (0001), 10x10.5x0.35 mm , 1SP Al2O3 Edge: Hand Seam (< 0GaN single crystal substrates is made by a hydride vapor phase epitaxy (HVPE) based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. The large growth rate enables the growth of self supporting wafer thicknesses in a convenient time period. Specifications of Substrate Orientation: c axis (0001) + 1. 0 o Type: N type(undoped) Nominal Thickness 350+ 25 microns Dimension: 10 mm x 10. 5 mm
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