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SiO2+Ti+Pt thin film on Si substrate ,10x5x0.5mm,1sp,B-doped,( SiO2=500nm,Ti=50nm ,Pt=200nm) Cathode one 62 mm L spacer
SiO2+Ti+Pt thin film on Si substrate ,10x5x0.5mm,1sp,B-doped,( SiO2=500nm,Ti=50nm ,Pt=200nm) Cathode one 62 mm L spacer
$49.99
Description
one 62 mm L spacer is included for cutting 18650 and 26650 cylindrical cell
Special Phenyl silicones can be used down to -148°F
Demo Video-- how to do battery research by the split cell
Voltage Rating : 250 V
SiO2+Ti+Pt thin film on Si substrate ,10x5x0.5mm,1sp,B-doped,( SiO2=500nm,Ti=50nm ,Pt=200nm) Cathode one 62 mm L spacerSilicon Wafer Specifications: Conductive type: SiO2+Ti+Pt thin film on Si(B doped) substrate ,10x5x0. 5mm,1sp( SiO2=500nm,Ti=50nm ,Pt=200nm) Resistivity: <0. 005 ohm. cm Size: 10x5 x 0. 5 mm Polish: one side polished Surface roughness: < 5A, RMS Related Products Thin Films A Z Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater
Shipping Notes
- Free Standard Shipping on $100+ Orders to the USA.
- Except Preorder products are shipped in 48 hours.
- Delivery to the USA:
- Standard Shipping : 3-10 business days
- If time is of the essence, please consider selecting expedited delivery for faster service.
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