Cu Film on Ta/Silicon Wafer , Cu=100 nm Ta=20nm,,Si(100) B-doped ,10x5x0.525mm,R:1-20 ohm.cm, 1sp CdWO4 alkaline slurries

alkaline slurries

The best crimper: MSK-PN110-S Compact Gas Driven for consistent result Pic1

Please keep the thermal gradient less than 100oC/cm to avoid cracking

Materials Case and cap made of  Nicke plated A3 steel

Cu Film on Ta/Silicon Wafer , Cu=100 nm Ta=20nm,,Si(100) B-doped ,10x5x0.525mm,R:1-20 ohm.cm, 1sp CdWO4 alkaline slurriesSpecifications: Cu coated Si Wafer ( 10x5 mm size ) Thickness of highly oriented polycrystalline Cu <111> film: 100 nm Thickness of Ta diffusion barrier: 20 50 nm 10x5x 0. 5 mm thickness Si wafer (Prime Grade) P type, B doped, <100> orientation, SSP Resistivities: 1 20 ohm cm Surface Roughness: as grown , RA < 10 nm Package: One 1000 class clean room with 100 class plastic bag 10 pcs per package for minimum order