LaAlO3, (100) ori. 10x10x1.0 mm substrate, 1 side EPI polished Orientation 10-14 Back surface finish: Silicon (

Back surface finish:                   Silicon ( 111) N-type P-doped R:1-10 ohm

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P_(actual on working piece )= F/S_(Cross-section area of the working piece )

or polishing pad

LaAlO3, (100) ori. 10x10x1.0 mm substrate, 1 side EPI polished Orientation 10-14 Back surface finish: Silicon (LaAlO3 single crystal provides a good lattice match to many materials with perovskite structure. It is an excellent substrate for the epitaxial growth of high Tc superconductors and magnetic and ferroelectric thin films. The dielectric properties of LaAlO3 crystal are well suitable for low loss microwave and dielectric resonance applications. Substrate Specifications: Wafer Size: 10 x 10 x 1. 0 mm thickness + 0. 05 mm, Wafer Orientation: (100) + 0. 5